Optical And Structural Properties of ZnxCd1-xS (X=0.2, 0.4, 0.6 AND 0.8)
Thin films prepared by thermal evaporation technique
DOI:
https://doi.org/10.31686/ijier.vol1.iss4.124Keywords:
Zinc Cadmium Sulphide (ZnxCd1-xS), Cadmium Sulphide (CdS), Zinc Sulphide (ZnS), Thermal evaporation, Thin film, Composition, Structural, Optical propertiesAbstract
Thin films of ZnxCd1-xS (x=0.2, 0.4, 0.6 and 0.8) were deposited on cleaned soda lime glass substrates at room temperature by thermal evaporation technique, having source current 50-65 Ampere, chamber pressure 10-5Torr and deposition rate 0.4 nm/sec. These conditions were same for all the thin films having different zinc concentrations. UV-VIS Spectrophotometry was used to study the optical properties of thin films of ZnxCd1-xS in room temperature. XRD was used to study the structure of the thin films of ZnxCd1-xS having various composition of „x‟. UV-VIS studies revealed that as the concentration of zinc content increases, transmission spectra shift towards the shorter wavelength region from (575-526)nm, the percent transmittance was increased in the visible range with the increase of zinc content, absorption edges and absorption coefficient spectra also shift towards the shorter wavelength and hence the direct band gap energy varied non-linearly from 2.55ev to 2.84ev.It was also found that optical conductivity increases with photon energy and thin film of Zn0.4Cd0.6S has high optical conductivity as compared to other value of „x‟. The reflectance and optical constants such as the extinction coefficient and refractive index were also found to depend upon the zinc concentration in the films. XRD studies showed that all the thin films of ZnxCd1-xS (x= 0.2, 0.4, 0.6 and 0.8) had a strong peak in between the diffraction angle 26.60- 31.70, which confirmed that all the thin films exhibited the wurtzite structure with a preferential orientation of (002) plane. It was also found that lattice constants, inters planer spacing, volume and grain size decreases except for Zn0.4Cd0.6S thin film which had high crystallinity as compared to the other composition of the zinc content.
References
: Goswami, Thin Film Fundamentals,New Age International (P) Limited, New Delhi, (1996).
: L.E.Brus, J.Chem. Phys.80, 4403(1984). DOI: https://doi.org/10.1063/1.447218
: M.Morkel, L.Weinhasdt, B.Lohmuller, C.Heske, E.Umbach, W.Riedl, S.Zweigart, F.Karg, Appl.Phys.Lett, 97:4482(2001). DOI: https://doi.org/10.1063/1.1428408
: K.T.R.Reddy and P.J.Reddy, J.Phys.D: 25, 1345(1992). DOI: https://doi.org/10.1088/0022-3727/25/9/011
: B.M.Basol, J.Appl.Phys, 55,601, (1984). DOI: https://doi.org/10.1063/1.333073
: L.C.Burton and T.L.Hench, Appl.Phys. Lett. 29,612(1976). DOI: https://doi.org/10.1063/1.89162
: J.I.B.Wilson and J.Woods, J.Phys.Chem. Solid. 34, 171 (1973). DOI: https://doi.org/10.1016/0022-3697(73)90074-7
: J.H.Lee, J.S.Yi, K.J.Yang, J.H.Park and R.D.oh, Thin Solid Films, 431-432, 344 (2003). DOI: https://doi.org/10.1016/S0040-6090(03)00153-6
: F.A. Cotton and G.Wilkinson Advanced Inorganic Chemistry, 4th ed. (Wiley Interscience New York, 1980).
: T.A. Chynoweth and R.H. Bube, J. Appl. Phys., 51, 1844(1980). DOI: https://doi.org/10.1063/1.327755
: S.K. Kulkarni, U. Winkler, N. Deshmukh, P.H. Borse, R. Fink and E. Umbach, Applied Surface Sci., 169, 438(2001). DOI: https://doi.org/10.1016/S0169-4332(00)00700-5
: T. Yamaguchi, J. Matsufusa and A. Yoshida, Jpn. J. Appl. Phys., 31, L703 (1992). [13]: T. Walter, M. Ruckh, K.O. Velthaus and H.W. Schock, Proc. 11th EC Photovoltaic Solar Energy Conf., Montreux, p. 124 (1992). DOI: https://doi.org/10.1143/JJAP.31.L703
: M. Oztas and M. Bedir, P.J. of Appl. Sci., 1, 214 (2001).
: A. Kuroyanagi, Thin Solid Films, 249, 91 (1994). DOI: https://doi.org/10.1016/0040-6090(94)90091-4
: T. Karasawa, K. Ohkawa and T. Mitsuya, J. Appl. Phys., 69, 3226 (1991). DOI: https://doi.org/10.1063/1.348541
: S.A. Telfar, C. Morhain, B. Urbascek, C. O'Donnell, P. Tomasini, A. Balocchi, K.A. Prior and B.C. Covenett, J. of Crys. Growth, 215, 197(2000). DOI: https://doi.org/10.1016/S0022-0248(00)00080-4
: Bhaskar Kumar, Parag Vasekar*, Shirish A. Pethe, Neelkanth G. Dhere, Galymzhan T.
Koishiyev, Thin Solid Films ,517, 2295-2299(2009). DOI: https://doi.org/10.1016/j.tsf.2008.10.108
: Wei Li, Jiayi Yang, Zhen Sun, Lianghuan Feng, Jingquan Zhang, and LiLi Wu, International Journal of Photoenergy, Article ID 969214, 5(2011).
: M.A. Mahdi, S.K.J.Al-Ani, Int.j.nanoelectronics and materials, 5, 11-24(2012).
:Mazin A. Mahdi, J.Basraha Researches (Sciences),Part.3, 32, 44 -50 (2006).
: Metin Berir, Refik Kayali and Mustafa Oztas,Turk J Physics, 26, 121-126(2002).
: R. Labusch and W. Schroter, Inst, Phys, Cont, London, England, Ser No. 23, 56(1975).
:S. Mantovani, V. Delpennine and E. Mazzega, Phys status solidi. , 35, 45(1976). DOI: https://doi.org/10.1002/pssa.2210350205
: Ayushkhare*, Chalcogenide letters, 6, 661-671(2009).
: J.N.Hodgon, Optical Absorption and Dispersion inSolids, London: Chapman and Hall(1970) taken from J.of Optoelectronics and Advanced Materials, 7, 2085 (2005).
: O.Heavens,Optical properties of Thin Solid Films,Dover, New York, (1965).
: J.Lee, J.Yi, K.Yang and D.Mangalaraj, J.Korean Phys.Society, 40,877 (2002).
: V.N.Popak, V.B.Odzhacv, I.P.Kozlov, I.I.Azarko, I.A.Kaprovich, D.V.Sviridor, Nucl.Inst and Meth B, 129, 60(1997). DOI: https://doi.org/10.1016/S0168-583X(97)00208-5
: S. Wang, X. Fu, G. Xia, J. Wang, J. Shao, Z. Fan, Appl. Surf.Sci, 252,8734 (2006). DOI: https://doi.org/10.1016/j.apsusc.2005.12.035
: Ndukwe, Solar Energy Materials and Solar Cells, 40, 123(1996). DOI: https://doi.org/10.1016/0927-0248(95)00074-7
: Hasse, M.A., Qiu, J., DePuydt, J.M., Cheng, H, Appl. Phys. Lett.,59, 1272(1991). DOI: https://doi.org/10.1063/1.105472
: S.A.Al Kuhaimi and Z.Tulbah,J.Electrochem.Soc, 147, 214-218 (2000). DOI: https://doi.org/10.1149/1.1393177
: K.Nagamani, M.V.Reddy, K.T.Ramakrishna Reddy, R.W.Miles, International Journal of optoelectronic Engineering, 2(2), 1-4 (2012). DOI: https://doi.org/10.5923/j.ijoe.20120202.01
: Woo- Chang Song, Jae-Hyeong LEE, Journal of the Korean Physical Society, 54(4), 1660166 April (2009).
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